Single-electron and quantum SOI devices

This paper describes, from the viewpoint of device fabrication, single-electron and quantum devices using silicon-oninsulators (SOIs). We point out that control of the oxidation of Si is quite important and could be the key to their fabrication. We also introduce our technique for making single-electron transistors (SETs), which uses special phenomena that occur during the oxidation of SOIs, and show that the technique enables us to realize primary single-electron circuits as a result of its high controllability and high reproducibility.  2001 Elsevier Science B.V. All rights reserved.